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Circuit-level and Device-level Measurements of the Threshold Voltage Instability in p-GaN HEMTs - title
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p-GaN HEMT-tüüpi transistoride lävipinge mõõtmine vooluringis ja eraldiseisva seadisena. Circuit-level and Device-level Measurements of the Threshold Voltage Instability in p-GaN HEMTs
Navolotskaia, Anna
16.01.2024
master's theses
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